advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 25v simple drive requirement r ds(on) 37m fast switching i d 5.8a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 2 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.016 continuous drain current 3 4.6 pulsed drain current 1 30 gate-source voltage continuous drain current 3 5.8 parameter rating drain-source voltage 25 pb free plating product 200301061-1/6 ap4936gm the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. 20 s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 37 m v gs =4.5v, i d =3.5a - - 60 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 6.5 - s i dss drain-source leakage current (t j =25 o c) v ds =25v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =20v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =5a - 6.9 - nc q gs gate-source charge v ds =16v - 1.2 - nc q gd gate-drain ("miller") charge v gs =5v - 4.5 - nc t d(on) turn-on delay time 2 v ds =16v - 6 - ns t r rise time i d =5a - 17.5 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 14.5 - ns t f fall time r d =3.2 - 5.5 - ns c iss input capacitance v gs =0v - 218 - pf c oss output capacitance v ds =25v - 155 - pf c rss reverse transfer capacitance f=1.0mhz - 63 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.2v - - 1.67 a v sd forward on voltage 2 t j =25 , i s =1.7a, v gs =0v - - 1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. 2/6 ap4936gm 20v 100
ap4936gm fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 3/6 0 5 10 15 20 25 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 6.0v 5.0v v gs =4.0v 0 5 10 15 20 25 30 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 6.0v 5.0v v gs =4.0v 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v gs =10v 20 25 30 35 40 45 50 55 60 34567891011 v gs (v) r ds(on) (m ) i d =5.0a t c =25
fig 5. maximum drain current v.s. fig 6. typical power dissipation case temperature fig 7. maximum safe operating area fig 8. effective transient thermal impedance ap4936gm 4/6 0 0.5 1 1.5 2 2.5 0 50 100 150 t c , case temperature ( o c) p d (w) 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t c =25 o c s in g le pulse 1ms 10ms 100ms 1s 10s d c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t c , case temperature ( o c) i d , drain current (a)
ap4936gm fig 9. gate charge characteristics fig 10. typical capacitance characteristics fig 11. forward characteristic of fig 12. gate threshold voltage v.s. reverse diode junction temperature 5/6 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v) 0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16 18 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =5a v ds =16v 10 100 1000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss 0.1 1 10 100 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) tj=25 o c tj=150 o c
ap4936gm fig 13. switching time circuit fig 14. switching time waveform fig 15. gate charge circuit fig 16. gate charge waveform 6/6 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 5v q gs q gd q g charge 0.64 x rated v ds to the oscilloscope - + d g s v ds v gs i d i g 1~ 3 m a 0.64 x rated v ds to the oscilloscope - + 10 v d g s v ds v gs r g r d
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